Increased Efficiency and Improved Reliability in “ORing” functions using Trench Schottky Technology
نویسندگان
چکیده
Presented in this paper are the characteristics of the first Trench MOS Schottky Diode released to manufacturing by International Rectifier. The optimized Silicon structure enables 15% VF reduction and a factor 4 of leakage suppression compared to a benchmark conventional planar device of the same voltage class. After reviewing the key features of Silicon design, the results of an in-circuit test are presented, indicating the advantage of using trench Schottky as OR-ing diodes in term of reduced power dissipation, reduced component count and improved ruggedness.
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